october 2010 fdb8445_f085 n-channel powertrench ? mosfet ?2010 fairchild semiconductor corporation fdb8445_f085 rev c (w) www.fairchildsemi.com 1 fdb8445_f085 n-channel powertrench ? mosfet 40v, 70a, 9m features ? typ r ds(on) = 6.8m at v gs = 10v, i d = 70a ? typ q g(10) = 44nc at v gs = 10v ? low miller charge ? low q rr body diode ? uis capability (single pulse/ re petitive pulse) ? qualified to aec q101 ? rohs compliant applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic transmission ? distributed power architecture and vrms ? primary switch for 12v systems d g s to-263ab fdb series gate source drain (flange) l e a d f r e e m t a e l n t i o m p e n i
fdb8445_f085 n-channel powertrench ? mosfet fdb8445_f085 rev c (w) www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v v gs = 0v - - 1 a t j =150 c - - 250 a i gss gate to source leakage current v gs = 20v - - 100 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 a 2 2.5 4 v r on) drain to source on resistance i d = 70a, v gs = 10v - 6.8 9 m i d = 70a, v gs = 10v, t j = 175 c - 13 17.2 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 2860 3805 pf c oss output capacitance - 295 395 pf c rss reverse transfer capacitance - 180 270 pf r g gate resistance f = 1mhz - 1.95 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v, i d = 70a, - 44 62 nc q g(th) threshold gate charge v gs = 0 to 2v - 2.9 4.1 nc q gs gate to source gate charge - 11 - nc q gs2 gate charge threshold to plateau - 8.2 - nc q gd gate to drain ?miller? charge - 11 - nc ds( absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current continuous (v gs = 10v) (note 1) 70 a pulsed figure 4 e as s i n g l e p u l s e a v a l a n c h e e n e r g y 1 0 2 m j p d power dissipation 92 w derate above 25 o c0 . 6 w / o c t j , t stg operating and storage temperature -55 to +175 o c r jc maximum thermal resistance, junction to case 1.63 o c/w r ja maximum thermal resistance, junction to ambient to-263, lin 2 cop- per pad area 43 o c/w device marking device package reel size tape width quantity fdb8445 fdb8445_f085 to-263ab 330mm 24mm 800 units (note 2)
fdb8445_f085 n-channel powertrench ? mosfet fdb8445_f085 rev c (w) www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t (on) turn-on time v dd = 20v, i d = 70a v gs = 10v, r gs = 5 : --45ns t d(on) turn-on delay time - 10 - ns t r turn-on rise time - 19 - ns t d(off) turn-off delay time - 36 - ns t f turn-off fall time - 16 - ns t off turn-off time - - 81 ns v sd source to drain diode voltage i sd = 70a - - 1.25 v i sd = 35a - - 1.0 v t rr reverse recovery time i f = 70a, di/dt = 100a/ p s--59ns q rr reverse recovery charge i f = 70a, di/dt = 100a/ p s--77nc notes: 1: maximum wire current carrying capacity is 70a. 2: starting t j = 25 o c, l = 65uh, i as = 56a. this product has been designed to meet the extreme test conditio ns and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconductor products ar e manufactured, assembled and tested under iso9000 and qs9000 quality systems certification.
fdb8445_f085 n-channel powertrench ? mosfet fdb8445_f085 rev c (w) www.fairchildsemi.com 4 typical characteristics figure 1. normalized power dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 20 40 60 80 100 v gs = 10v current limited by wire i d , drain current (a) t c , case temperature ( o c ) maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 normalized maximum transi ent thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 2000 transconductance may limit current in this region t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdb8445_f085 n-channel powertrench ? mosfet fdb8445_f085 rev c (w) www.fairchildsemi.com 5 figure 5. 1 10 100 0.1 1 10 100 1000 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc forward bias safe operating area 0.01 0.1 1 10 100 1 10 100 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) 400 500 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 100 120 140 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 01234 0 20 40 60 80 100 120 140 v gs = 3.5v v gs = 4v v gs = 4.5v v gs = 5v v gs = 10v pulse duration = 80 s duty cycle = 0.5% max v ds , drain to source voltage (v) i d , drain current (a) saturation characteristics figure 9. 45678910 8 12 16 20 t j = 25 o c i d = 70a pulse duration = 80 s duty cycle = 0.5% max t j = 175 o c r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage ( v ) drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulse duration = 80 s duty cycle = 0.5% max i d = 70a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics
fdb8445_f085 n-channel powertrench ? mosfet fdb8445_f085 rev c (w) www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source br eakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 i d = 250 a normalized drain to source breakdown voltage t j , junction temperature ( o c ) figure 13. 0.1 1 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss v ds , drain to source voltage ( v ) capacitance (pf) 50 capacitance vs drain to source voltage figure 14. 0 1020304050 0 1 2 3 4 5 6 7 8 9 10 v dd = 25v v dd = 15v v dd = 20v i d = 70a v gs , gate to source voltage ( v ) q g , gate charge (nc) gate charge vs gate to source voltage typical characteristics
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fdb8445_f085 n-channel powertrench ? mosfet fdb8445_f085 rev c (w) www.fairchildsemi.com 7
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